In this paper, we examine the effect of the energy difference between the L- and the -valleys in compound semiconductor materials, carrier effective mass, and the scattering processes on the electron transport characteristics in MESFETs. To do this, we use the Monte Carlo simulation to demonstrate the superiority of the InGaAs MESFET, made on a semi-insulating InP substrate, over both InP and GaAs MESFETs. Furthermore, we study the effects of device structure on the electron transport characteristics. For the first time we study electron transport characteristics in the channel of a LDD InGaAs MESFET with an InP source. This structure demonstrates to have the highest average electron velocity through out its channel among the other MESFETs

Keywords: Monte Carlo simulation, Compound Semiconductors, GaAs, InGaAs, InP, MESFET

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