Volume 13, Issue 3 (2013)                   MJEE 2013, 13(3): 29-34 | Back to browse issues page

XML Persian Abstract Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Hajmirzaheydarali M, . Sadeghipari M, Soleimani-Amiri S, Akbari M, Shahsafi A, Hajhosseini H, et al . Gate decorated Field Effect Transistors for high sensitivity pH sensing. MJEE. 13 (3) :29-34
URL: http://mjee.modares.ac.ir/article-17-4410-en.html
1- Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran.
2- Nano-electronics Lab, Nano-electronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran
Abstract:   (3716 Views)
We present a micro/nano-machining process to introduce nanostructured poly-silicon layer on the gate region of the pH-sensitive field effect transistors. Decoration of the gate of the field effect transistors by nanostructures plays an important role to improve the sensitivity of the pH-sensitive FETs. Electron beam lithography was exploited to realize the poly-Si nanopillars on the gate surface. Comparison between different micro and nanostructures demonstrates the potential of nanopillars to be utilized on the gate of this device rather than micro-conical structures (different size and shapes) and vertically carbon nanotubes. A high sensitivity of 500 mV/pH has been achieved, through the incorporation of silicon based nanopillars.
Full-Text [PDF 199 kb]   (1847 Downloads)    

Received: 2014/10/6 | Accepted: 2013/08/23 | Published: 2016/01/6

Add your comments about this article : Your username or Email:
CAPTCHA